Samsung is reportedly preparing a major shift in its memory production strategy as DRAM demand continues to surge on the back of global AI infrastructure growth. According to Korean industry reports cited by SE Daily, the company plans to convert parts of its NAND flash lines in Pyeongtaek and Hwaseong into DRAM production, and will also run its upcoming Pyeongtaek Fab 4 (P4) as a DRAM-only line using Samsung's latest 1c process. Industry sources say Samsung has become cautious about the NAND market, while demand for standard DRAM has jumped sharply. Prices are rising fast, and some server customers are said to be offering as much as 70% higher prices for 96 GB and 128 GB DDR5 modules but still can't secure enough supply. Big tech firms reportedly expect shortages to run for years and are already negotiating DRAM allocations for 2027.

Samsung currently produces both DRAM and NAND across Pyeongtaek Fab 1, Pyeongtaek Fab 3, and its Hwaseong campus. The hybrid lines at P1 and Hwaseong will shift further toward DRAM as NAND equipment is removed. Fab 4, now in final construction, will start up next year as a dedicated 1c DRAM line, and Samsung is also considering using a second zone of P4, originally planned for foundry production, for DRAM as well. Once the changes are in place, Samsung's DRAM output from P1 (Hwaseong) and Fab 4 (P4) is expected to climb significantly in the first half of next year. Reduced Korean NAND production will reportedly be offset by higher output from Samsung's Xi'an plant in China.

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